BTS56033-LBB infineon

Description

BTS56033-LBB Infineon

Overview

The BTS56033-LBB is a high-current, low-ohmic, N-channel power MOSFET from Infineon, designed for a wide range of applications, including automotive and industrial systems.

Key Features

  • Low On-Resistance: R DS(on) = 1.8 mΩ (typical)
  • High Current Capability: I D = 280 A (typical)
  • Low Gate Charge: Q g = 110 pC (typical)
  • High Switching Speed: t on = 12 ns (typical), t off = 23 ns (typical)
  • High Junction Temperature: T j = 175°C (maximum)
  • Robust Package: TO-247 (3-pin)

Electrical Characteristics

Symbol Parameter Value (typical) Unit
V DS Drain-Source Voltage 30 V
V GS Gate-Source Voltage ± 20 V
I D Drain Current 280 A
R DS(on) On-Resistance 1.8
Q g Gate Charge 110 pC
t on Turn-On Time 12 ns
t off Turn-Off Time 23 ns
T j Junction Temperature 175 °C

Thermal Resistance

Symbol Parameter Value (typical) Unit
R thJC Junction-to-Case Thermal Resistance 0.45 K/W
R thJA Junction-to-Ambient Thermal Resistance 62 K/W

Package and Dimensions

The BTS56033-LBB is available in a TO-247 (3-pin) package, with the following dimensions:

  • Package Type: TO-247 (3-pin)
  • Package Size: 16.46 mm x 5.31 mm x 2.69 mm

Applications

The BTS56033-LBB is suitable for a wide range of applications, including:

  • Automotive systems
  • Industrial systems
  • Motor control
  • Power supplies
  • DC-DC converters

Ordering Information

The BTS56033-LBB is available for ordering, with the following part number:

  • BTS56033-LBB

Please contact the manufacturer or a authorized distributor for more information and to place an order.