Description

BSS84AK-215

Nexperia BSS84AK-215 is a P-channel Trench MOSFET designed for high-efficiency switching applications.

Key Features

• Low Vgs(th) of -0.7 V at Vds = -5 V and Id = -1 mA
• High Id of -8.5 A at Vgs = -10 V and Vds = -5 V
• Low Rds(on) of 45 mΩ at Vgs = -10 V and Vds = -5 V
• High switching speed with low input capacitance
• Very low gate-charge

Product Specifications

• Drain-Source Voltage (Vds): -55 V
• Gate-Source Voltage (Vgs): ±20 V
• Continuous Drain Current (Id): -8.5 A
• Pulsed Drain Current (Id): -21 A
• On-Resistance (Rds(on)): 45 mΩ
• Threshold Voltage (Vgs(th)): -0.7 V
• Input Capacitance (Ciss): 490 pF
• Output Capacitance (Coss): 170 pF
• Reverse Transfer Capacitance (Crss): 20 pF

Package Information

• Package Type: SOT23 (TO-236AB)
• Package Code: 215
• Lead-Free: Yes
• Halogen-Free: Yes

Thermal Characteristics

• Junction-to-Ambient Thermal Resistance (Rth(j-a)): 200 K/W
• Junction-to-Case Thermal Resistance (Rth(j-c)): 15 K/W

Reliability Specifications

• Moisture Sensitivity Level (MSL): 1
• ESD (HBM): 2000 V
• Latch-Up Testing: Compliant with JEDEC standard JESD78

Applications

• DC-DC conversion
• Power management
• High-efficiency switching
• Portable electronics
• Automotive electronics

Ordering Information

• BSS84AK-215: Standard Product

Note: All parameters listed are subject to change. Refer to the manufacturer’s datasheet for the most up-to-date information.