Description

BSS83P – P-Channel Enhancement Mode Vertical DMOS FET

The BSS83P is a P-Channel enhancement mode vertical DMOS FET, designed for high speed switching applications. This device is suitable for a wide range of applications, including DC-DC converters, motor control, and power management.

Features:

• Low on-resistance: RDS(on) = 0.065 Ω (typical)
• High current handling: ID = -7.6 A (continuous)
• Low gate charge: Qg = 12 nC (typical)
• High speed switching: tf = 15 ns (typical), tr = 20 ns (typical)
• Low threshold voltage: VGS(th) = -0.8 V (typical)
• Enhancement mode operation
• Vertical DMOS structure for high density and reliability

Electrical Characteristics:

• RDS(on) = 0.065 Ω (VGS = -10 V, ID = -7.6 A)
• ID = -7.6 A (VDS = -20 V, VGS = -10 V)
• Qg = 12 nC (VGS = -10 V, ID = -7.6 A)
• VGS(th) = -0.8 V (VDS = -20 V, ID = -1 mA)
• tf = 15 ns (VGS = -10 V, ID = -7.6 A)
• tr = 20 ns (VGS = -10 V, ID = -7.6 A)

Package:

• TO-92 (3-pin)
• SOT-23 (3-pin)
• SO-8 (3-pin)

Applications:

• DC-DC converters
• Motor control
• Power management
• High speed switching applications

Absolute Maximum Ratings:

• VDS = -30 V
• VGS = ±20 V
• ID = -7.6 A (continuous)
• PD = 1.5 W (TA = 25°C)
• TJ = 150°C
• Tstg = -55°C to 150°C

Note: All parameters are subject to change without notice. It is recommended to verify the parameters with the manufacturer before using the device in a specific application.