Description

BSS308PE

Description

The BSS308PE is a high-performance, low-threshold voltage, P-Channel Enhancement-Mode MOSFET. It is designed for high-frequency switching applications, including DC-DC converters, power supplies, and motor control systems.

Features

• Low threshold voltage: 0.55V
• High drain current: -5.8A
• Low on-resistance: 34mΩ
• High switching speed: 10ns
• Low gate charge: 5.5nC
• High ruggedness and reliability

Specifications

• Drain-Source Voltage (Vds): -30V
• Gate-Source Voltage (Vgs): -20V
• Drain Current (Id): -5.8A
• On-Resistance (Rds(on)): 34mΩ
• Threshold Voltage (Vth): 0.55V
• Gate Charge (Qg): 5.5nC
• Input Capacitance (Ciss): 430pF
• Output Capacitance (Coss): 140pF
• Reverse Transfer Capacitance (Crss): 30pF
• Operating Temperature (Tj): -55°C to 150°C
• Storage Temperature (Tstg): -55°C to 150°C

Package

• Type: TO-236
• Pinouts:
  • Gate: 1
  • Source: 2
  • Drain: 3

Applications

• DC-DC converters
• Power supplies
• Motor control systems
• High-frequency switching applications

Note: All parameters are subject to change without notice.