Description

BCP68T1G-ON

General Description

The BCP68T1G-ON is a N-Channel Enhancement Mode Power MOSFET designed for high current, low voltage applications. It features low on-resistance, high switching speed, and excellent thermal performance.

Key Features

• High current capability: 68A
• Low on-resistance: 13.5mΩ
• High switching speed: 10ns
• Excellent thermal performance: Tj = 150°C
• Low gate charge: 21nC
• High ruggedness and reliability

Applications

• DC-DC Converters
• Motor Control
• Power Management
• Switch Mode Power Supplies

Package and Pin Configuration

• Package: TO-252
• Pin Configuration:
  • Gate: 1
  • Drain: 2
  • Source: 3

Electrical Characteristics

• Static Characteristics
  • Vds = 10V, Id = 250μA: Vgs(th) = 0.55V
  • Vds = 10V, Id = 250μA: Idss = 1.2mA
• Dynamic Characteristics
  • Vds = 10V, Vgs = 10V, Id = 10A: Rds(on) = 13.5mΩ
  • Vds = 10V, Vgs = 10V, Id = 10A: Qg = 21nC
• Thermal Characteristics
  • Junction-to-Case: Rθjc = 1.1°C/W
  • Junction-to-Ambient: Rθja = 62°C/W

Absolute Maximum Ratings

• Electrical Ratings
  • Vds: 30V
  • Vgs: ±20V
  • Id: 68A
  • Pd: 150W
• Thermal Ratings
  • Tj: 150°C
  • Tstg: -40°C to 150°C

Typical Performance Characteristics

The BCP68T1G-ON is designed to provide high current handling capability and low on-resistance. The device is suitable for a wide range of applications, including DC-DC converters, motor control, power management, and switch mode power supplies.

Ordering Information

The BCP68T1G-ON is available in TO-252 package. For ordering information, please contact our sales team.