Description
BC847CWT1G ON Semiconductor
Description
The BC847CWT1G is a High Gain, Low VCE(sat) Breakthrough On Resistance NPN Transistor in a SOT-23 package. It is designed for use in general purpose amplifier applications.
Features
- High current gain (hFE)
- Low collector-emitter saturation voltage (VCE(sat))
- High switching speed
- SOT-23 package for space-saving designs
- General purpose amplifier applications
Packages and Dimensions
- Package Type: SOT-23
- Package Code: WT1
- Number of Pins: 3
- Dimensions:
- Width: 2.9 mm
- Length: 1.6 mm
- Height: 0.95 mm
Rating and Characteristics
- Absolute Maximum Ratings:
- Collector-Base Voltage (VCB): 30 V
- Collector-Emitter Voltage (VCE): 30 V
- Emitter-Base Voltage (VBE): 5 V
- Collector Current (IC): 100 mA
- Base Current (IB): 10 mA
- Thermal Characteristics:
- Thermal Resistance (RthJA): 200 °C/W
- Operating Junction Temperature (Tj): -55 to 150 °C
- Electrical Characteristics:
- DC Current Gain (hFE): 250 min
- Collector-Emitter Saturation Voltage (VCE(sat)): 0.07 V max
- Base-Emitter Saturation Voltage (VBE(sat)): 0.7 V max
Application Information
The BC847CWT1G is suitable for use in a wide range of general purpose amplifier applications, including:
- Audio amplifiers
- Video amplifiers
- Voltage regulators
- Switching regulators
Ordering Information
The BC847CWT1G is available in a SOT-23 package. For more information, please contact the manufacturer.