BC817-40LT3G ON

Description

BC817-40LT3G ON Semiconductor

Product Overview

The BC817-40LT3G is a general purpose NPN bipolar junction transistor designed for use in a wide range of applications. It is part of the BC817 series, which offers a high current gain and low voltage operation.

Key Features

  • NPN Transistor: Suitable for general purpose amplifier and switching applications
  • High Current Gain: Up to 400 hFE (min) at 100 mA IC
  • Low Voltage Operation: Collector-emitter voltage up to 45 V
  • Small Package: SOT-23 (TO-236) package for compact designs

Electrical Characteristics

  • Collector-Base Voltage (Vcbo): 50 V
  • Collector-Emitter Voltage (Vceo): 45 V
  • Emitter-Base Voltage (Vebo): 5 V
  • Collector Current (Ic): 500 mA
  • Base Current (Ib): 50 mA
  • Current Gain (hFE): 400 (min) at 100 mA IC
  • Transition Frequency (fT): 100 MHz

Package and Thermal Information

  • Package Type: SOT-23 (TO-236)
  • Thermal Resistance (Rthj-a): 200 °C/W
  • Operating Junction Temperature (Tj): -55 to 150 °C
  • Storage Temperature (Tstg): -55 to 150 °C

Applications

  • General Purpose Amplifiers
  • Switching Applications
  • Audio and Video Equipment
  • Medical Devices
  • Industrial Control Systems

Documentation and Support

For more information, please refer to the BC817-40LT3G datasheet and application notes.