Description
BC807-25-Q
P-Channel Enhancement Mode Vertical DMOS FET
Features:
- Low on-resistance
- High switching speed
- Low gate charge
- High avalanche energy
Applications:
- Battery management
- DC-DC conversion
- Power management
- Load switching
Specifications:
- Drain-Source Voltage (VDS): -55V
- Gate-Source Voltage (VGS): -25V
- Drain Current (ID): -4.5A
- On-Resistance (RDS(on)): 60mΩ
- Threshold Voltage (VGS(th)): -1 to -2.5V
- Power Dissipation (PD): 1.3W
- Junction Temperature (TJ): -55 to 150°C
- Storage Temperature (TSTG): -55 to 150°C
Package:
TO-220AB
Ordering Information:
BC807-25-Q
Marking:
BC807
Note: All parameters are subject to change without notice.