Description
BAS516-115 NXP
Product Overview
The BAS516-115 is a high-performance transistor from NXP, designed for a wide range of applications, including audio amplifiers, switching regulators, and power management systems.
Key Features
- High current gain: 100-300
- Low collector-emitter saturation voltage: 0.5 V
- High collector-base voltage: 115 V
- High collector current: 1 A
- Low base-emitter voltage: 0.7 V
- High power dissipation: 1.25 W
Electrical Characteristics
- Collector-emitter voltage (Vce): 115 V
- Collector-base voltage (Vcb): 115 V
- Emitter-base voltage (Veb): 5 V
- Collector current (Ic): 1 A
- Base current (Ib): 50 mA
- Current gain (hfe): 100-300
- Collector-emitter saturation voltage (Vce(sat)): 0.5 V
- Base-emitter voltage (Vbe): 0.7 V
Package and Thermal Characteristics
- Package type: TO-92
- Package outline: 4.58 mm x 3.86 mm x 4.92 mm
- Junction temperature (Tj): 150°C
- Storage temperature (Tstg): -55°C to 150°C
- Thermal resistance (Rth(j-a)): 125 K/W
Applications
- Audio amplifiers
- Switching regulators
- Power management systems
- Industrial control systems
- Automotive systems
Ordering Information
- Part number: BAS516-115
- Package: TO-92
- Quantity: 1 piece (minimum order quantity)
Note: All parameters are subject to change without notice. Please verify the specifications with the manufacturer before ordering.