BAS516,115 NXP

Description

BAS516-115

Overview

The BAS516-115 is a high-quality, general-purpose NPN transistor designed for a wide range of applications. It is known for its reliability, efficiency, and cost-effectiveness, making it a popular choice among electronics enthusiasts and manufacturers alike.

Key Features

  • Collector-Emitter Voltage (Vceo): 115 V
  • Collector-Base Voltage (Vcbo): 115 V
  • Emitter-Base Voltage (Vebo): 5 V
  • Collector Current (Ic): 1 A
  • Base Current (Ib): 50 mA
  • Current Gain (hFE): 100-300
  • Power Dissipation (Ptot): 625 mW
  • Operating Temperature Range: -55°C to 150°C

Applications

The BAS516-115 is versatile and can be used in various electronic circuits, including:

  • Switching applications
  • Amplifier stages
  • Low-power voltage regulators
  • Medium-speed switching

Packaging

  • Package Type: TO-92
  • Weight: Approximately 0.5 grams

Additional Information

For detailed specifications, including graphs and more technical data, please refer to the datasheet. Always ensure the transistor is used within its specified parameters to ensure reliability and longevity.

Datasheet and Documentation

A comprehensive datasheet is available, providing detailed information on the device’s characteristics, application notes, and safe handling practices. It is recommended to consult the datasheet before designing or using the BAS516-115 in any electronic circuit.