Description
2SD1048-7 TB-E ON Transistor
Overview
The 2SD1048-7 TB-E ON is a semiconductor device designed for use in a wide range of electronic applications, particularly in power management and amplification circuits. This transistor type is characterized by its ability to handle significant power levels while maintaining low noise and high reliability.
Key Features
- Type: NPN Epitaxial Planar Transistor
- Package Type: TO-247 (3-pin)
- Collector-Emitter Voltage (Vce): -60V
- Collector-Base Voltage (Vcb): -80V
- Emitter-Base Voltage (Veb): -5V
- Collector Current (Ic): 15A
- Base Current (Ib): 5A
- Transistor Transition Frequency (f_T): 30MHz
- Thermal Resistance Junction to Case (Rjc): 0.625°C/W
- Operating and Storage Junction Temperature Range: -55°C to +150°C
Applications
This transistor is suitable for a variety of applications, including but not limited to:
- Switching and linear amplification
- Power supplies and regulators
- Motor control circuits
- High power audio amplifiers
- Automotive and industrial control systems
Specifications
| Parameter | Value | Unit |
|---|---|---|
| Vce | -60 | V |
| Vcb | -80 | V |
| Veb | -5 | V |
| Ic | 15 | A |
| Ib | 5 | A |
| f_T | 30 | MHz |
| Rjc | 0.625 | °C/W |
Physical Characteristics
- The device is encapsulated in a TO-247 package, which is widely used for high power transistors due to its ability to efficiently dissipate heat.
- Leads are made of tin-plated copper, ensuring good solderability and reliability.
Ordering Information
- Part Number: 2SD1048-7 TB-E ON
- Package: TO-247 (3-pin)
Additional Information
For the most current and detailed specifications, please refer to the official datasheet provided by the manufacturer. It is essential to follow proper handling and soldering techniques to ensure the longevity and reliability of the transistor in your electronic designs.