Description

2SA2125-TD-E ON Semiconductor Datasheet

Overview
The 2SA2125-TD-E is a high-performance PNP epitaxial transistor designed for use in a wide range of applications, including amplifiers, switches, and voltage regulators. This device is manufactured by ON Semiconductor and is part of their 2SA series of transistors.

Key Features

• High current gain (hFE) of 1000 min
• Low collector-emitter saturation voltage (VCE(sat)) of 0.5 V max
• High collector-base voltage (VCB) of -120 V
• High emitter-base voltage (VBE) of -5 V
• Low noise figure
• High reliability and stability

Electrical Characteristics

• Collector-Base Voltage (VCB): -120 V
• Collector-Emitter Voltage (VCE): -120 V
• Emitter-Base Voltage (VBE): -5 V
• Collector Current (IC): -5 A
• Base Current (IB): -1 A
• Current Gain (hFE): 1000 min
• Collector-Emitter Saturation Voltage (VCE(sat)): 0.5 V max
• Noise Figure: 2 dB typ

Package and Pinout
The 2SA2125-TD-E is available in a TO-252 (DPAK) package with the following pinout:

• Collector: 1
• Base: 2
• Emitter: 3

Environmental Ratings
The 2SA2125-TD-E is rated for operation in a wide range of environments, including:

• Storage Temperature: -55°C to +150°C
• Operating Temperature: -55°C to +150°C
• Moisture Sensitivity Level: MSL 1

Ordering Information
To order the 2SA2125-TD-E, please contact your local ON Semiconductor distributor or representative. The part number is 2SA2125-TD-E.