2N6045G ON
Available
2N6045G ON
Features • High DC Current Gain − hFE = 2500 (Typ) @ IC = 4.0 Adc • Collector−Emitter Sustaining Voltage − @ 100 mAdc − VCEO(sus) = 60 Vdc (Min) − 2N6040, 2N6043 = 100 Vdc (Min) − 2N6042, 2N6045 • Low Collector−Emitter Saturation Voltage − VCE(sat) = 2.0 Vdc (Max) @ IC = 4.0 Adc − 2N6043,44 = 2.0 Vdc (Max) @ IC = 3.0 Adc − 2N6042, 2N6045 • Monolithic Construction with Built−In Base−Emitter Shunt Resistors • Epoxy Meets UL 94 V−0 @ 0.125 in • ESD Ratings: Human Body Model, 3B > 8000 V Machine Model, C > 400 V • These Devices are Pb−Free and are RoHS Compliant*
Features • High DC Current Gain − hFE = 2500 (Typ) @ IC = 4.0 Adc • Collector−Emitter Sustaining Voltage − @ 100 mAdc − VCEO(sus) = 60 Vdc (Min) − 2N6040, 2N6043 = 100 Vdc (Min) − 2N6042, 2N6045 • Low Collector−Emitter Saturation Voltage − VCE(sat) = 2.0 Vdc (Max) @ IC = 4.0 Adc − 2N6043,44 = 2.0 Vdc (Max) @ IC = 3.0 Adc − 2N6042, 2N6045 • Monolithic Construction with Built−In Base−Emitter Shunt Resistors • Epoxy Meets UL 94 V−0 @ 0.125 in • ESD Ratings: Human Body Model, 3B > 8000 V Machine Model, C > 400 V • These Devices are Pb−Free and are RoHS Compliant*
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